Wet Etching
Our wet etching services provide precise chemical etching solutions for semiconductor, MEMS, and microfabrication applications. We support isotropic and highly selective material removal across a wide range of substrates, including silicon, glass, quartz, and thin film materials. Wet etching is ideal for batch processing, undercut structures, and applications requiring smooth surfaces and high material selectivity. Our processes are tailored for research, prototyping, and advanced device development.
Key capabilities
- Undercut-based release structures
- Crystal-plane selective etching (e.g. Si)
- Uniform bulk material removal
- Oxide vs silicon selectivity
- Metal etching chemistries
- Layer-by-layer removal control
- Parallel wafer processing
- Simple equipment setup
- High throughput capability
Etching approaches
Technical considerations
| Etch type | Isotropic / anisotropic (crystallographic) |
| Materials | Si, SiO₂, Si₃N₄, metals, glass |
| Selectivity | Material dependent chemistry control |
| Etch rate | Temperature and concentration dependent |
| Masking | Photoresist, oxide, nitride |
| Surface finish | Smooth or crystal-faceted surfaces |
| Batch scale | High throughput parallel processing |
Typical materials
Applications
Release structures, cavities, microchannels
Oxide removal, surface cleaning, pattern transfer
Waveguide and optical structure definition
Selective layer removal and device structuring
Engineering considerations
Wet etching is often preferred for its simplicity, scalability, and strong material selectivity. However, compared with dry etching, it provides less directional control and may introduce undercutting. Choosing the correct chemistry, mask material, and process temperature is critical to achieving the desired etch profile and device performance.
Need a wet etching process?
Share your material, etch depth, and structure requirements.