Ion Implantation Services
Our ion implantation services provide precise semiconductor doping solutions for silicon, SiC, and advanced materials. We offer accurate control of ion dose, energy, and depth profiles to support device fabrication, process development, and research applications. Designed for MEMS, power devices, and advanced semiconductor structures, our implantation processes enable consistent and repeatable dopant placement with tight process control. From shallow junction formation to deeper implantation profiles, we tailor each process to meet specific device and material requirements.
Process methods
01
Ion Implantation
Precise dopant introduction into semiconductor substrates with controlled dose, energy, and depth profiles.
- Single and multi-energy implantation
- Wide dose range capability
- Controlled junction depth
- Mask-based selective implantation
02
Widebandgap Doping
Specialized doping processes for SiC, GaN, and diamond substrates for high-power and high-temperature device development.
- Doping for SiC / GaN / Diamond
- N-type and P-type implantation
- Process support for device structures
- Compatible with epitaxial layers
Material compatibility & applications
Material compatibility
Typical applications
- Power electronics (SiC devices)
- Semiconductor device prototyping
- Junction formation and doping profiles
- Sensor and MEMS devices
- Research and process development
Advanced capabilities
Specialized process options
Multi-step implantation strategies
Mask-assisted selective doping
High-temperature activation for SiC
Process tuning for target electrical performance
Integration with deposition and lithography processes
Process specifications
Key process parameters
| Parameter | Specification | Notes |
|---|---|---|
| Implant species | N-type & P-type dopants | Substrate & device dependent |
| Energy range | keV – MeV range | Junction depth dependent |
| Dose range | Wide — research to device-grade | Controlled & repeatable |
| Implant modes | Single energy, multi-energy, tilt | Profile engineering supported |
| Annealing temperature | Up to 1700°C (SiC process) | Capping layer options available |
| Supported substrates | Si, SiC, GaN, compound semiconductors | Epitaxial wafers supported |
| Wafer size | Up to 6 inches (150 mm) | Smaller sizes supported |
Need doping or ion implantation support?
Share your substrate, dopant type, and target parameters — we can help define an optimized implantation and activation process.