Semiconductor Etching Services

Our semiconductor etching services deliver high-precision dry and wet etching solutions for MEMS, microfabrication, and advanced materials. We support key processes including RIE, ICP, and DRIE, enabling both anisotropic and isotropic etching with excellent uniformity, selectivity, and profile control. From pattern transfer to surface planarization, our etching and surface processing capabilities are tailored to meet application-specific requirements across research, prototyping, and low-volume production. We work with a wide range of materials including silicon, SiO₂, Si₃N₄, quartz, and compound semiconductors.

Supported materials

Silicon (Si) SiO₂ SiNₓ Al Au Cr Ti Glass & quartz GaN SiC Ceramics Compound materials

Typical applications

  • MEMS fabrication
  • Microfluidic device patterning
  • Semiconductor processing
  • Surface preparation for thin film deposition
  • Micro- and nano-structure definition
  • Photonic & waveguide etching

Key process parameters

Parameter Specification Notes
Dry etch methods RIE, ICP, DRIE (Bosch & cryogenic) Material & structure dependent
Aspect ratio (DRIE) Up to 30:1+ Si & SiC substrates
Wet etch chemistry HF, KOH, H₃PO₄, BOE, and custom Isotropic & anisotropic options
Etch selectivity High — material dependent Mask options: photoresist, SiO₂, metal
Surface roughness (CMP) Ra < 1 nm achievable Material & process dependent
Wafer size Up to 6 inches (150 mm) Smaller sizes supported
Supported materials Si, SiO₂, SiNₓ, metals, GaN, SiC, glass Custom on request

Need precision etching or surface processing?

Tell us your material, target etch depth, and application — our team will identify the right process and respond within 48 hours.