Thermal Evaporation Services | DR Research Foundry
Physical Vapor Deposition

Thermal
Evaporation
Services

High-vacuum thermal evaporation for precise metal and dielectric thin film deposition. Angstrom-level thickness control, 99.99% purity source materials, and in-situ QCM monitoring for semiconductor research and prototype device fabrication.

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QCM VACUUM 10⁻⁷ Torr POWER
Schematic — High-Vacuum
Thermal Evaporation System
10⁻⁷
Base Pressure (Torr)
<1Å
Thickness Resolution
4"
Max Wafer Size
99.99%
Source Purity

Precision Thin Film
Deposition

DR Research Foundry provides thermal evaporation deposition services for semiconductor research, MEMS fabrication, photonic device development, and advanced materials research. Our high-vacuum system enables the deposition of high-purity metal, alloy, and dielectric thin films with angstrom-level thickness control.

Thermal evaporation is a physical vapor deposition (PVD) technique in which source material is resistively heated to its evaporation point under high vacuum. The resulting vapor flux condenses on the substrate surface, forming a dense, continuous thin film with excellent adhesion and precisely controlled thickness.

Our system is equipped with an in-situ quartz crystal microbalance (QCM) for real-time deposition rate monitoring, a programmable shutter for precise thickness control, and a rotating substrate holder for uniform film coverage across the full wafer area.

Base Pressure≤ 1 × 10⁻⁷ Torr
Deposition Rate0.1 – 10 Å/s (controllable)
Thickness Uniformity< ±3% across 4" wafer
Film Thickness Range5 nm – 2 µm
Substrate SizeCoupons to 4" wafers
Rate MonitorIn-situ QCM
Substrate RotationYes — planetary rotation
Source ConfigurationResistive / e-beam capable

From Substrate to Film — Our Process

01 / PREP
Substrate Preparation
Substrates are cleaned using a solvent cascade (acetone, IPA, DI water) followed by nitrogen blow-dry and optional plasma cleaning to remove contaminants and improve adhesion.
02 / LOAD
Source & Chamber Loading
High-purity source material (≥ 99.99%) is loaded into the tungsten boat or crucible. Substrate is mounted on the rotating holder. Chamber is sealed and pumped to base pressure.
03 / DEPOSIT
Controlled Evaporation
Source material is ramped to evaporation temperature under controlled current. Deposition rate is stabilized via QCM before the shutter opens to begin film growth on the substrate.
04 / VERIFY
Metrology & Inspection
Post-deposition film thickness and uniformity are verified by profilometry or ellipsometry. Sheet resistance and surface morphology are characterized on request before delivery.

Metals, Alloys & Dielectrics

Contact Metals
Gold (Au)
High-conductivity contact layer for ohmic contacts, bond pads, and RF device electrodes. Compatible with lift-off patterning.
Contact Metals
Aluminum (Al)
Standard interconnect and gate metal for MOSFET, MEMS, and thin-film transistor device structures.
Adhesion / Barrier
Titanium (Ti) / Chromium (Cr)
Adhesion promotion layer for Au, Cu, and Ag films on oxide and nitride surfaces. Typical thickness 5–20 nm.
Optical / Conductive
Silver (Ag)
High-reflectivity mirror layer and plasmonic nanostructure base film for photonic and biosensor device platforms.
Refractory Metals
Nickel (Ni) / Palladium (Pd)
Silicide-forming contacts for SiC and GaN power device fabrication. Excellent thermal stability post-anneal.
Dielectrics
SiO₂ / MgF₂ / LiF
Optical thin films for anti-reflection coatings, passivation layers, and gate dielectric applications at low substrate temperatures.

Deposition Parameters

ParameterSpecificationNotes
Base Pressure≤ 1 × 10⁻⁷ TorrTurbomolecular + roughing pump combination
Deposition Rate0.1 – 10 Å/sProgrammable ramp; QCM closed-loop or open-loop control
Film Thickness5 nm – 2,000 nmVerified by profilometry or ellipsometry post-deposition
Thickness Uniformity< ±3% (4" wafer)Enabled by planetary substrate rotation
Substrate SizeCoupons – 4" wafersCustom fixturing for non-standard substrates available
Substrate TemperatureRT – 300 °CHeated stage available on request
Multi-Layer DepositionYes (sequential)Bilayer and trilayer stacks without breaking vacuum
Source Purity≥ 99.99% (4N)5N sources available on request
Lift-Off CompatibleYesOptimized for PMMA and LOR bilayer resist systems

Device Platforms We Support

MEMS & Microsensors
Metal electrode deposition for capacitive sensors, piezoelectric devices, and microactuators. Adhesion layer and contact metal stacks for suspended membrane structures.
Photonic Devices
High-reflectivity mirror coatings, plasmonic nanostructure base layers, and optical contact metals for waveguide-integrated photodetectors and LED structures.
Power Electronics
Ohmic contact formation on SiC and GaN substrates using Ni/Au and Ti/Al/Ni/Au stacks. Post-deposition annealing services available for contact sintering.
Biosensors & Lab-on-Chip
Gold electrode deposition for electrochemical biosensors, SPR chips, and microfluidic electrode arrays. Compatible with Si, glass, and polymer substrates.
RF & Microwave Devices
Low-resistance Au gate and interconnect metallization for GaAs and GaN RF transistors. Seed layer deposition for electroplated transmission line structures.
Advanced Materials Research
Thin film deposition for 2D material contacts, topological insulator electrodes, and functional oxide heterostructures for academic and government R&D programs.

The Right Process
for Your Application

Thermal evaporation is the preferred deposition method for applications requiring high film purity, sharp material interfaces, and lift-off-compatible film morphology. Because deposition occurs in high vacuum without plasma bombardment, thermally sensitive substrates and delicate resist patterns remain undamaged — a critical advantage over sputtering for fine-feature patterning.

The directionality of evaporated flux enables excellent shadow mask deposition and precise edge definition during lift-off, making thermal evaporation the method of choice for gate metal definition in transistor fabrication and electrode patterning in sensor devices.

Flexible Engagement
for R&D Teams

DR Research Foundry works directly with principal investigators, device engineers, and program managers to develop deposition recipes tailored to your specific device requirements. We offer both standard and custom process flows, with full in-house metrology to verify film quality before shipment.

Our team supports single-run prototype depositions, iterative process development campaigns, and small-volume production runs. Process documentation, deposition logs, and characterization data are provided with every order to support publication and process transfer requirements.

Ready to Discuss Your
Deposition Requirements?

Submit your process requirements and our engineering team will respond with a detailed technical assessment and project quote within 2 business days.

Contact Our Team