Ion Implantation
Precision ion implantation services for controlled dopant introduction into semiconductor substrates and device structures. We support research and prototype-scale implantation workflows where dose, energy, projected depth, and mask-defined selectivity are critical to junction formation, resistivity tuning, and device performance. Implantation conditions are selected according to substrate type, target dopant species, depth profile, and the full downstream thermal activation sequence.
Key capabilities
01
Controlled dopant introduction
Implant conditions can be selected to tune concentration, projected range, and electrical behavior for junction and device formation.
- Single and multi-energy implantation
- Wide dose range capability
- Depth profile engineering
- N-type and P-type process support
02
Selective implantation
Local implantation regions can be defined using masks and patterned openings to support device-specific doping layouts.
- Photoresist or hard-mask based windows
- Area-selective implantation
- Controlled junction placement
- Compatibility with patterned device flows
03
Integration with activation workflows
Implantation is planned together with post-implant annealing, capping, and recovery steps to achieve the intended electrical result.
- Post-implant activation planning
- Lattice damage recovery sequence
- Thermal budget awareness
- Device-structure compatibility review
Process workflow
How implantation projects are typically structured
Define dopant and target electrical objective
The process begins with selecting the dopant species and defining the device goal, such as carrier type, sheet resistance, junction depth, contact region formation, or compensation control.
Set dose and energy profile
Implant dose and energy are chosen according to the desired depth distribution and concentration profile. Multi-energy schemes may be used to broaden or tailor the implanted region.
Prepare selective masking if needed
When only defined regions should be implanted, mask materials and opening geometry are selected according to the implant species, energy, and blocking requirements.
Implant and characterize process window
The implantation step is executed under controlled beam conditions, followed by review of process targets such as projected depth, uniformity, and compatibility with later activation and device fabrication steps.
Technical considerations
Key implantation parameters
| Parameter | Typical consideration | Engineering note |
|---|---|---|
| Dopant species | N-type or P-type dopants depending on substrate and device target | Species choice directly affects activation route and electrical behavior |
| Dose | Application dependent across low to high dose regimes | Determines carrier concentration and damage level |
| Implant energy | Single or multi-energy strategy | Used to control projected range and profile shape |
| Junction depth | Defined by energy, dose, material, and thermal cycle | Must be considered together with annealing |
| Mask strategy | Photoresist or hard mask depending on blocking requirement | Higher energy implants may require more robust masking |
| Uniformity | Across coupon, die, or wafer-scale substrates | Important for repeatable electrical performance |
| Substrate type | Si, SiC, GaN, diamond, and other research substrates | Material strongly affects damage and activation strategy |
| Post-implant needs | Activation, damage recovery, capping, and surface protection | Implantation should not be treated as an isolated step |
Typical dopants and targets
Typical applications
Power devices
Doping steps for junction formation, compensation regions, and engineered electrical profiles.
Wide-bandgap R&D
Targeted implantation in SiC, GaN, and related advanced semiconductor platforms.
Device prototyping
Research-scale dopant introduction for custom structures, test vehicles, and proof-of-concept flows.
Selective structures
Mask-based implantation for local electrical regions and patterned device layouts.
Engineering considerations
Successful ion implantation depends on the full combination of dopant species, dose, energy, mask strategy, and post-implant thermal treatment. Project outcomes are strongest when the intended device structure, electrical target, and activation conditions are defined together from the beginning.
Need a custom ion implantation workflow?
Tell us your substrate, dopant target, depth goal, and masking approach. We can help define a practical implantation path for research and prototype development.