Dry Etching
Plasma-based dry etching services for precise, anisotropic material removal and microstructure definition in semiconductor, MEMS, sensor, photonic, and advanced research applications. We support RIE, ICP, and DRIE-style process development for pattern transfer, trench etching, via opening, dielectric removal, and high aspect ratio structure fabrication. Etch processes are selected based on material system, profile requirements, mask strategy, selectivity, and downstream integration needs.
Key capabilities
01
Precise anisotropic etching
Dry etching is well suited for directional material removal when lateral undercut must be minimized and feature profiles must be tightly controlled.
- Vertical or near-vertical sidewall formation
- Reduced undercut compared with wet etching
- Pattern transfer from photoresist or hard masks
- Controlled opening of films and device layers
- Useful for fine microfabrication geometries
02
Plasma process flexibility
Process conditions can be tuned through gas chemistry, RF power, chamber pressure, and bias conditions to balance etch rate, selectivity, and profile control.
- RIE for general plasma etching and pattern transfer
- ICP for higher plasma density and improved control
- DRIE-style routes for deep and high aspect ratio features
- Process adaptation for metals, dielectrics, and semiconductors
- Recipe tuning for sidewall, roughness, and mask preservation
03
Etch integration with device fabrication
Etch steps are developed with attention to mask choice, film stack structure, post-etch cleanliness, and compatibility with later deposition, bonding, and packaging operations.
- Photoresist or hard-mask based process routes
- Film-opening, trench, cavity, and via etch steps
- Etch-stop and multilayer selectivity considerations
- Support for MEMS, sensors, photonics, and electronics
- Research and prototype process iteration
Etching approaches
Dry etching methods we support
Reactive Ion Etching (RIE)
RIE combines chemical reactivity and ion bombardment to etch thin films and selected substrate materials with good directionality and process simplicity. It is commonly used for dielectric opening, thin film pattern transfer, and general microfabrication where moderate anisotropy and controllable profile shape are required.
Inductively Coupled Plasma (ICP) Etching
ICP etching provides higher plasma density and more independent control of ion density and ion energy than basic RIE configurations. This is useful when higher etch rate, better anisotropy, improved selectivity, or tighter process tuning is required for more demanding films and microstructures.
Deep Reactive Ion Etching (DRIE)
DRIE-style processing is used for deep trenches, through-structure features, and high aspect ratio silicon or related substrate etching. It is especially relevant for MEMS, microfluidics, deep vias, and mechanical microstructures where depth, profile control, and dimensional fidelity are critical.
Application-specific etch development
Etch chemistry, pressure, source power, platen bias, and mask route can be adjusted according to the material being etched and the target geometry. This is particularly important for multilayer stacks, sensitive substrates, fine critical dimensions, and processes that must balance etch rate against mask erosion or surface damage.
Technical considerations
Key parameters for dry etch process development
| Parameter | Typical consideration | Engineering note |
|---|---|---|
| Etch mode | RIE, ICP, DRIE, or application-specific plasma route | Selected by depth, aspect ratio, material, and profile target |
| Material system | Semiconductors, dielectrics, selected metals, and multilayer films | Chemistry must match etch target and stop layer behavior |
| Profile control | Anisotropic, tapered, or application-tuned sidewalls | Dependent on plasma density, bias, and chemistry balance |
| Etch depth | Thin film opening to deep structural features | Strongly affects mask selection and process stability |
| Aspect ratio | Standard microfeatures to deep high aspect ratio structures | Higher aspect ratio generally increases transport and loading effects |
| Selectivity | Etch target relative to mask and stop layer | Critical for multilayer pattern transfer and dimensional control |
| Mask strategy | Photoresist, oxide, nitride, or metal hard mask | Chosen based on etch depth, chemistry, and erosion rate |
| Surface condition | Roughness, residue level, plasma damage, post-etch cleanliness | Important for later bonding, deposition, and interface quality |
| Feature density effects | Microloading and pattern-dependent etch behavior | Dense and isolated features may etch differently |
| Substrate temperature | Process dependent | Can influence polymer formation, profile, and mask behavior |
| Integration route | Standalone etch step or part of full fabrication flow | Must be coordinated with deposition, lithography, and packaging steps |
| Project scale | R&D, prototype development, engineering iteration | Best suited for custom device and process development programs |
Typical etch targets
Typical applications
MEMS fabrication
Deep trenches, released structures, cavities, and directional etch steps for silicon and related MEMS process flows.
Microelectronics
Dielectric opening, thin film pattern transfer, via formation, and etch steps used in device and interconnect fabrication.
Photonics & optics
Waveguide, optical film, and patterned microstructure etching where profile control and dimensional precision are important.
Sensors & microfluidics
Channel definition, cavity etching, surface structuring, and device-layer opening for sensor and microfluidic platforms.
Engineering considerations
Why dry etching is often chosen
Dry etching is often preferred when directional control, reduced undercut, and precise transfer of fine lithographic patterns are important. Compared with wet chemical routes, plasma-based processes offer more flexibility in sidewall profile control and are better suited for high aspect ratio or closely packed microstructures. In practice, successful etch development requires balancing etch rate, selectivity, mask durability, residue control, and final profile shape. Sharing the target material stack, required etch depth, mask type, and critical feature dimensions early helps define a more reliable etch process for the full fabrication workflow.
Need a custom dry etch process?
Tell us your material stack, etch depth, feature size, and mask strategy. We can help evaluate the right plasma etch route for research, prototyping, and device development.