CVD / PECVD
DR Research Foundry provides CVD and PECVD deposition services for semiconductor research and advanced device fabrication. Our deposition systems deliver high-uniformity thin films with precise thickness control, tailored stoichiometry, and low defect density across a wide range of substrate materials and device architectures.
These CVD and PECVD deposition services support the growth of dielectric, passivation, and structural thin films essential to modern semiconductor devices, enabling reliable performance in both research and prototype applications.
CVD and PECVD are foundational processes in semiconductor fabrication. Our PhD engineering team optimizes gas chemistry, chamber pressure, RF power, and substrate temperature to achieve film properties that meet stringent device requirements, including uniformity, stress control, and electrical performance.
Our capabilities include deposition of silicon dioxide (SiO₂), silicon nitride (Si₃N₄), silicon oxynitride (SiON), amorphous silicon, and low-stress nitride films. These materials serve as gate dielectrics, passivation layers, hard masks, and inter-metal dielectrics across MEMS, power electronics, photonics, and RF device platforms.
Post-deposition characterization is performed in-house using ellipsometry and profilometry to verify film thickness, refractive index, and stress. DR Research Foundry collaborates closely with clients to develop and qualify deposition recipes optimized for specific material stacks and downstream process compatibility.
Key capabilities
01
Dielectric and passivation films
Suitable for insulating, barrier, protective, and interface layers required in semiconductor, MEMS, sensor, and optical device fabrication.
- SiO₂, Si₃N₄, and related dielectric films
- Surface passivation and environmental protection
- Electrical isolation and interface engineering
- Barrier layers for device stability and packaging
- Functional coatings for custom applications
02
Conformal and uniform coverage
CVD-based processes are well suited for uniform coating on complex topography where dense and continuous coverage is important.
- Good step coverage on structured surfaces
- Useful for trenches, cavities, and 3D features
- Uniform film growth across research substrates
- Process tuning for thickness and stress balance
- Supports multilayer dielectric integration
03
Low-temperature PECVD options
PECVD enables film formation at lower substrate temperatures, helping preserve temperature-sensitive materials and previously fabricated structures.
- Suitable for back-end and research device flows
- Reduced thermal load compared with high-temp CVD
- Useful for glass, polymers, and hybrid stacks
- Custom recipes for film density and stress targets
- Research-scale process development available
Deposition methods
CVD and PECVD process routes
Thermal CVD
Thermal CVD is generally used where higher process temperatures are acceptable and film quality, density, and conformality are priorities. It is suitable for selected dielectric and protective layers on thermally robust substrates such as silicon, quartz, sapphire, and ceramics.
PECVD
Plasma-enhanced CVD lowers the effective deposition temperature by activating precursor chemistry with plasma. This makes it practical for dielectric films on temperature-sensitive wafers, glass substrates, MEMS structures, and device stacks that cannot tolerate conventional high-temperature processing.
Research-scale recipe development
Process windows can be adjusted based on target thickness, refractive behavior, stress, insulation performance, deposition temperature, and downstream compatibility. This is especially useful when balancing film performance against integration constraints in prototype and early-stage device development.
Custom dielectric stack engineering
Multilayer dielectric architectures can be evaluated for passivation, optical tuning, surface isolation, mechanical protection, and process integration. Film selection depends on required thickness, target electrical properties, mechanical stress tolerance, and the full fabrication sequence.
Technical specifications
CVD / PECVD capabilities and key parameters
| Parameter | Typical capability | Engineering note |
|---|---|---|
| Process types | Thermal CVD and PECVD | Selected based on substrate thermal budget and film target |
| Film classes | Dielectrics, passivation films, barrier layers, functional coatings | Material choice depends on device and integration requirements |
| Typical thickness range | From thin interface layers to µm-scale coatings | Defined by insulation, protection, or optical function |
| Substrate compatibility | Si, glass, quartz, sapphire, ceramics, selected metals and polymers | Review needed for plasma and temperature sensitivity |
| Deposition temperature | Application-specific; lower options available with PECVD | Important for back-end integration and hybrid structures |
| Film conformity | Good coverage on structured and patterned surfaces | One key advantage over purely line-of-sight deposition methods |
| Film stress control | Recipe dependent | Can be optimized for cracking, bow, and adhesion concerns |
| Electrical behavior | Insulating and passivating performance can be tuned | Depends on precursor chemistry and process window |
| Surface function | Isolation, passivation, barrier protection, optical tuning | Often chosen based on downstream device objectives |
| Patterning compatibility | Blanket deposition followed by lithography / etch, or integration in multilayer flow | Route selected case by case |
| Project scale | R&D, prototype development, low-volume engineering work | Well suited for universities, labs, and startup device programs |
Typical materials
Typical applications
Microelectronics
Interlayer dielectrics, passivation films, protective coatings, and electrically isolating layers for device development and integration.
MEMS
Conformal dielectric coatings for microstructures, cavities, membranes, and multilayer MEMS process flows.
Photonics & optics
Optical thin films, protective surface layers, and dielectric coatings for waveguides, windows, and optical components.
Sensors
Passivation, surface stabilization, environmental protection, and functional dielectric coatings for sensor devices and packages.
Engineering considerations
Choosing between CVD and PECVD
The right route depends on film function, allowable substrate temperature, desired conformality, film stress tolerance, and downstream process sequence. Thermal CVD may be preferred when higher-temperature processing is acceptable and dense film growth is prioritized, while PECVD is often a better fit when lower thermal budget, broader substrate compatibility, or integration with completed device layers is required. Sharing substrate type, target thickness, operating environment, and later lithography or etch steps helps define a more reliable film strategy.
Need a custom CVD or PECVD film process?
Tell us your substrate, target film type, thickness goal, and device application. We can help evaluate the right deposition route and develop a practical process path for your project.