CMP & Surface Finishing
DR Research Foundry provides chemical mechanical polishing (CMP) services and precision surface finishing for semiconductor research and device fabrication. Our CMP services deliver angstrom-level surface planarization across a wide range of substrate materials and thin film stacks.
These chemical mechanical polishing (CMP) services support both inter-layer dielectric (ILD) planarization and metal CMP applications, enabling high-quality multilayer device integration.
CMP is a critical process in advanced semiconductor fabrication, providing the global planarization required for complex device architectures. Our PhD engineering team optimizes slurry chemistry, polishing pressure, and platen speed for each material system, ensuring consistent removal rates and minimal surface defects across the wafer.
Our surface finishing capabilities support materials including silicon dioxide (SiO₂), silicon nitride (SiNx), copper (Cu), tungsten (W), and low-k dielectric films. Post-CMP cleaning and in-house metrology verify surface roughness, thickness uniformity, and defect density before subsequent processing.
DR Research Foundry’s CMP services are well-suited for MEMS devices, power electronics, photonic integrated circuits, and heterogeneous integration platforms. We collaborate directly with research teams to develop and qualify CMP process recipes for novel material systems and advanced device structures.
Planarization
Achieve global and local surface flatness across wafers and substrates.
- Wafer-level planarization
- Interlayer leveling
- Surface uniformity control
Low roughness finishing
Surface smoothing for optical, bonding, and interface-sensitive applications.
- Sub-nanometer roughness targets
- Scratch and defect reduction
- Optical-grade surface preparation
Multilayer readiness
Prepare surfaces for deposition, bonding, and integration steps.
- Improved adhesion
- Interface cleanliness
- Stack integration compatibility
Chemical Mechanical Polishing (CMP)
Combination of chemical reactions and mechanical abrasion to achieve controlled material removal and smooth surfaces.
Mechanical polishing
Purely mechanical processes for bulk material removal and initial surface leveling prior to fine polishing.
Fine finishing & cleaning
Post-polish cleaning and surface conditioning for improved cleanliness and interface quality.
| Process type | CMP / mechanical polishing / hybrid |
| Materials | Si, glass, quartz, sapphire, metals, ceramics |
| Surface roughness | Application dependent (low nm → sub-nm) |
| Planarity | Global and local planarization |
| Removal rate | Controlled by slurry, pressure, speed |
| Uniformity | Across wafer or substrate surface |
| Defect control | Scratch, particle, and contamination reduction |
| Integration | Pre-deposition, bonding, or lithography steps |
Interlayer planarization and surface prep
Flat surfaces for bonding and structures
Optical surface finishing
Precision polishing and integration
CMP and surface finishing are critical steps in advanced device fabrication, especially when stacking multiple layers or requiring high-quality interfaces. Surface roughness, planarity, and contamination directly affect adhesion, electrical contact, optical performance, and bonding yield. Process selection must balance removal rate, uniformity, defect control, and compatibility with subsequent fabrication steps.
Need surface finishing or CMP?
Tell us your material, roughness target, and integration needs.