Atomic Layer
Deposition
Services
Conformal atomic layer deposition (ALD) for ultra-thin dielectric, oxide, and functional coatings. Our ALD process enables angstrom-level thickness control, high uniformity, and excellent step coverage for semiconductor, MEMS, photonics, and advanced materials research.
Request a QuotePrecision Thin Film
Deposition
DR Research Foundry provides atomic layer deposition (ALD) services for semiconductor research, MEMS fabrication, photonic devices, nanomaterials, and advanced thin film engineering. ALD enables highly conformal coatings with atomic-scale thickness control across complex surface geometries.
Atomic layer deposition is a vapor-phase thin film process based on sequential self-limiting surface reactions. Alternating precursor pulses deposit material one atomic layer at a time, enabling exceptional thickness uniformity, conformality, and repeatability even on high-aspect-ratio structures.
Our ALD process supports dielectric layers, passivation films, diffusion barriers, optical coatings, and functional oxide thin films for research and prototype device fabrication.
| Deposition Method | Thermal / PEALD |
| Thickness Control | Atomic-scale precision |
| Film Uniformity | < ±2% across wafer |
| Substrate Size | Coupons to 6" wafers |
| Deposition Temperature | 80 – 350 °C |
| Typical Growth Rate | ~0.5–1.5 Å / cycle |
| Conformality | Excellent high-aspect-ratio coverage |
| Film Types | Oxides, nitrides, functional materials |
From Substrate to Film — Our Process
Metals, Alloys & Dielectrics
Deposition Parameters
| Parameter | Specification | Notes |
|---|---|---|
| Base Pressure | ≤ 1 × 10⁻⁷ Torr | High-vacuum chamber for reduced contamination |
| Sputtering Modes | DC / RF | DC for conductive targets; RF for insulating or dielectric targets |
| Process Gas | Ar, O₂, N₂ | Reactive sputtering available depending on material and target |
| Film Thickness | 5 nm – 2,000 nm | Measured by profilometry or ellipsometry |
| Film Uniformity | < ±3% across 4" wafer | Substrate rotation improves uniformity |
| Substrate Size | Coupons – 4" wafers | Custom fixturing available for small or irregular samples |
| Substrate Temperature | RT – 300 °C | Heated substrate deposition available by request |
| Multilayer Deposition | Yes | Sequential metal / dielectric / barrier stacks available |
| Pattern Compatibility | Blanket / Shadow Mask / Lift-Off | Lift-off feasibility depends on film thickness and sidewall profile |
Device Platforms We Support
Atomic-Scale Thickness
Control & Conformal Coverage
Atomic layer deposition is widely used when thin films require exceptional conformality, precise thickness control, and uniform coating across complex topography or high-aspect-ratio structures. ALD is particularly valuable for advanced semiconductor devices, MEMS, nanostructures, and optical coatings.
Compared with conventional deposition techniques, ALD enables highly controlled film growth through self-limiting surface chemistry, resulting in dense, pinhole-free coatings with excellent repeatability and nanoscale thickness precision.
Flexible Engagement
for R&D Teams
DR Research Foundry works directly with principal investigators, device engineers, and program managers to develop deposition recipes tailored to your specific device requirements. We offer both standard and custom process flows, with full in-house metrology to verify film quality before shipment.
Our team supports single-run prototype depositions, iterative process development campaigns, and small-volume production runs. Process documentation, deposition logs, and characterization data are provided with every order to support publication and process transfer requirements.
Need Conformal Thin Film
Deposition for Your Device?
Send us your substrate, target material, thickness, temperature limits, and application requirements. Our engineering team will review feasibility and provide a detailed quotation.
Contact Our Team